Resumen
This document gives a classification of the dislocations and process-induced defects, from among the various surface defects, that occur on single-crystal gallium nitride (GaN) substrates or single-crystal GaN films.
It is applicable to the dislocations and process-induced defects exposed on the surface of the following types of GaN substrates or films:
— single-crystal GaN substrate;
— single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate;
— single-crystal GaN film formed by heteroepitaxial growth on a single-crystal aluminium oxide (Al2O3), silicon carbide (SiC) or silicon (Si) substrate.
It is not applicable to defects exposed on the surface if the absolute value of the acute angle between the surface normal and the c-axis of GaN is ≥ 8°.
Preview
Informaciones generales
-
Estado: PublicadoFecha de publicación: 2023-11Etapa: Norma Internacional publicada [60.60]
-
Edición: 1Número de páginas: 7
-
Comité Técnico :ISO/TC 206ICS :81.060.30
- RSS actualizaciones
Ciclo de vida
Got a question?
Check out our FAQs
Opening hours:
Monday to Friday - 09:00-12:00, 14:00-17:00 (UTC+1)