ISO 14701:2011 specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished specimens and for instruments that incorporate an Al or Mg X-ray source, a specimen stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in the standard, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.
Status: WithdrawnPublication date: 2011-08
Edition: 1Number of pages: 15
Technical Committee: ISO/TC 201/SC 7 Electron spectroscopies
- ICS :
- 71.040.40 Chemical analysis
ISO 14701:2011Stage: 95.99
Got a question?
Check out our FAQs
Monday to Friday - 09:00-12:00, 14:00-17:00 (UTC+1)
Keep up to date with ISO
Sign up to our newsletter for the latest news, views and product information.